2SD1767T100R
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- Mfr.Part #
- 2SD1767T100R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.7A MPT3
- Stock
- 893
- In Stock ：
- 893
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 80V
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 120
- Transistor Application :
- SWITCHING
- Base Part Number :
- 2SD1767
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Terminal Form :
- Flat
- Pin Count :
- 3
- Termination :
- SMD/SMT
- Published :
- 2004
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 400mV
- Collector Emitter Breakdown Voltage :
- 80V
- Package / Case :
- TO-243AA
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 120MHz
- ECCN Code :
- EAR99
- Current Rating :
- 700mA
- Transition Frequency :
- 120MHz
- Max Breakdown Voltage :
- 80V
- HTS Code :
- 8541.21.00.75
- Power Dissipation :
- 500mW
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 3V
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 700mA
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Max Power Dissipation :
- 2W
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 80V
- Pbfree Code :
- yes
- Continuous Collector Current :
- 700mA
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Datasheets
- 2SD1767T100R
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD1767T100R Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 100mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 700mA in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 700mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 120MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 700mA volts at Single BJT transistors maximum.
2SD1767T100R Features
the DC current gain for this device is 180 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 700mA
a transition frequency of 120MHz
2SD1767T100R Applications
There are a lot of ROHM Semiconductor
2SD1767T100R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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