2SD1767T100R
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- Mfr.Part #
- 2SD1767T100R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.7A MPT3
- Stock
- 893
- In Stock ：
- 893
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Max Power Dissipation :
- 2W
- Max Collector Current :
- 700mA
- Pin Count :
- 3
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 80V
- Base Part Number :
- 2SD1767
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- 700mA
- REACH SVHC :
- No SVHC
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- hFE Min :
- 120
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Number of Elements :
- 1
- HTS Code :
- 8541.21.00.75
- Voltage - Rated DC :
- 80V
- Power Dissipation :
- 500mW
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Package / Case :
- TO-243AA
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Transition Frequency :
- 120MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Termination :
- SMD/SMT
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- 700mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 3V
- Gain Bandwidth Product :
- 120MHz
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 80V
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Published :
- 2004
- Terminal Form :
- Flat
- Collector Emitter Voltage (VCEO) :
- 400mV
- Datasheets
- 2SD1767T100R
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD1767T100R Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 100mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 700mA in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 700mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 120MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 700mA volts at Single BJT transistors maximum.
2SD1767T100R Features
the DC current gain for this device is 180 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 700mA
a transition frequency of 120MHz
2SD1767T100R Applications
There are a lot of ROHM Semiconductor
2SD1767T100R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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