2SD1766T100P
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- Mfr.Part #
- 2SD1766T100P
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 32V 2A MPT3
- Stock
- 303
- In Stock ：
- 303
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 2A
- Current Rating :
- 2A
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Terminal Finish :
- TIN COPPER
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Transition Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Factory Lead Time :
- 7 Weeks
- hFE Min :
- 82
- Base Part Number :
- 2SD1766
- Collector Emitter Breakdown Voltage :
- 32V
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2004
- JESD-609 Code :
- e2
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 32V
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- 32V
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 500mA 3V
- Terminal Form :
- Flat
- Number of Terminations :
- 3
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 100MHz
- Max Power Dissipation :
- 2W
- Pin Count :
- 3
- Mount :
- Surface Mount
- VCEsat-Max :
- 0.8 V
- Contact Plating :
- Copper, Tin
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Collector Base Voltage (VCBO) :
- 40V
- Package / Case :
- TO-243AA
- Transistor Type :
- NPN
- JESD-30 Code :
- R-PSSO-F3
- Datasheets
- 2SD1766T100P
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD1766T100P Overview
This device has a DC current gain of 82 @ 500mA 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 800mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 2A volts is possible.
2SD1766T100P Features
the DC current gain for this device is 82 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz
2SD1766T100P Applications
There are a lot of ROHM Semiconductor
2SD1766T100P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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