2SD1760TLQ
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- Mfr.Part #
- 2SD1760TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A CPT3
- Stock
- 1,364
- In Stock ：
- 1,364
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 1V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Max Breakdown Voltage :
- 50V
- ECCN Code :
- EAR99
- Contact Plating :
- Copper, Tin
- Operating Temperature :
- 150°C TJ
- Termination :
- SMD/SMT
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 90MHz
- Max Collector Current :
- 3A
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e2
- Radiation Hardening :
- No
- Frequency :
- 90MHz
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation :
- 15W
- Base Part Number :
- 2SD1760
- Voltage - Rated DC :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 2
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Height :
- 2.3mm
- Width :
- 5.5mm
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- hFE Min :
- 82
- Collector Emitter Breakdown Voltage :
- 50V
- Current Rating :
- 3A
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 50V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Published :
- 1999
- Max Power Dissipation :
- 15W
- Number of Elements :
- 1
- Length :
- 6.5mm
- Gain Bandwidth Product :
- 90MHz
- Terminal Finish :
- TIN COPPER
- Packaging :
- Tape and Reel (TR)
- Datasheets
- 2SD1760TLQ
NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1760TLQ Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 500mA 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 200mA, 2A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 90MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
2SD1760TLQ Features
the DC current gain for this device is 120 @ 500mA 3V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 90MHz
2SD1760TLQ Applications
There are a lot of ROHM Semiconductor
2SD1760TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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