2SD1758TLQ
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- Mfr.Part #
- 2SD1758TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 32V 2A CPT3
- Stock
- 45,892
- In Stock ：
- 45,892
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Number of Terminations :
- 2
- Max Power Dissipation :
- 1W
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 40V
- Contact Plating :
- Copper, Tin
- Collector Emitter Voltage (VCEO) :
- 800mV
- Published :
- 1998
- Base Part Number :
- 2SD1758
- Mounting Type :
- Surface Mount
- HTS Code :
- 8541.29.00.75
- JESD-609 Code :
- e2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 32V
- Transistor Application :
- SWITCHING
- Continuous Collector Current :
- 2A
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Termination :
- SMD/SMT
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current Rating :
- 2A
- Transition Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Max Breakdown Voltage :
- 32V
- Pin Count :
- 3
- hFE Min :
- 120
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Max Collector Current :
- 2A
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- Power Dissipation :
- 1W
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 32V
- Power - Max :
- 10W
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- 2SD1758TLQ
NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1758TLQ Overview
This device has a DC current gain of 120 @ 500mA 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 800mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 32V volts can be used.A maximum collector current of 2A volts is possible.
2SD1758TLQ Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz
2SD1758TLQ Applications
There are a lot of ROHM Semiconductor
2SD1758TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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