2SD1758TLP
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- Mfr.Part #
- 2SD1758TLP
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 32V 2A CPT3
- Stock
- 45,627
- In Stock ：
- 45,627
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- R-PSSO-G2
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 500mA 3V
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Published :
- 2004
- Contact Plating :
- Copper, Tin
- Terminal Finish :
- TIN COPPER
- Number of Pins :
- 3
- Power - Max :
- 10W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 32V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Max Power Dissipation :
- 1W
- Voltage - Rated DC :
- 32V
- Continuous Collector Current :
- 2A
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 82
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Current Rating :
- 2A
- Number of Terminations :
- 2
- Base Part Number :
- 2SD1758
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Collector Emitter Breakdown Voltage :
- 32V
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 2A
- Terminal Form :
- Gull wing
- Transition Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Pin Count :
- 3
- JESD-609 Code :
- e2
- Datasheets
- 2SD1758TLP
NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1758TLP Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 82 @ 500mA 3V.When VCE saturation is 800mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 2A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.In the part, the transition frequency is 100MHz.A maximum collector current of 2A volts can be achieved.
2SD1758TLP Features
the DC current gain for this device is 82 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz
2SD1758TLP Applications
There are a lot of ROHM Semiconductor
2SD1758TLP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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