2SD1757KT146R
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- Mfr.Part #
- 2SD1757KT146R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.5A SMT3
- Stock
- 1,722
- In Stock ：
- 1,722
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 15V
- Collector Base Voltage (VCBO) :
- 30V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Contact Plating :
- Copper, Silver, Tin
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 15V
- Length :
- 2.9mm
- Base Part Number :
- 2SD1757
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 150MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pin Count :
- 3
- Continuous Collector Current :
- 500mA
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Height :
- 1mm
- HTS Code :
- 8541.21.00.75
- hFE Min :
- 120
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transistor Type :
- NPN
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6.5V
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Published :
- 1998
- Collector Emitter Saturation Voltage :
- 100mV
- Collector Emitter Voltage (VCEO) :
- 15V
- Width :
- 1.6mm
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Max Collector Current :
- 500mA
- Factory Lead Time :
- 13 Weeks
- Max Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 15V
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 500mA
- Transition Frequency :
- 150MHz
- Max Power Dissipation :
- 200mW
- JESD-609 Code :
- e1
- Datasheets
- 2SD1757KT146R
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD1757KT146R Overview
DC current gain in this device equals 120 @ 100mA 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 100mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.An emitter's base voltage can be kept at 6.5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 15V volts.In extreme cases, the collector current can be as low as 500mA volts.
2SD1757KT146R Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 6.5V
the current rating of this device is 500mA
a transition frequency of 150MHz
2SD1757KT146R Applications
There are a lot of ROHM Semiconductor
2SD1757KT146R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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