2SD1733TLR
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- Mfr.Part #
- 2SD1733TLR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A CPT3
- Stock
- 3,918
- In Stock ：
- 3,918
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 1A
- Collector Emitter Breakdown Voltage :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Base Part Number :
- 2SD1733
- Voltage - Rated DC :
- 80V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 10W
- hFE Min :
- 120
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 3V
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 120V
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 21 Weeks
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 150mV
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 2
- Max Collector Current :
- 1A
- JESD-609 Code :
- e2
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Pin Count :
- 3
- Contact Plating :
- Copper, Tin
- Frequency :
- 100MHz
- Continuous Collector Current :
- 1A
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 100MHz
- Published :
- 1998
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 500mA
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 80V
- JESD-30 Code :
- R-PSSO-G2
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 100MHz
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Datasheets
- 2SD1733TLR
NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1733TLR Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 500mA 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 150mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 20mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2SD1733TLR Features
the DC current gain for this device is 180 @ 500mA 3V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz
2SD1733TLR Applications
There are a lot of ROHM Semiconductor
2SD1733TLR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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