2SD1733TLR
- Mfr.Part #
- 2SD1733TLR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A CPT3
- Stock
- 3,918
- In Stock :
- 3,918
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Continuous Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 80V
- Pbfree Code :
- yes
- Power Dissipation :
- 1W
- Transition Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- 150mV
- Gain Bandwidth Product :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 80V
- Current Rating :
- 1A
- Collector Emitter Voltage (VCEO) :
- 80V
- JESD-609 Code :
- e2
- ECCN Code :
- EAR99
- Max Collector Current :
- 1A
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Number of Elements :
- 1
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number :
- 2SD1733
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 3V
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Contact Plating :
- Copper, Tin
- Number of Pins :
- 3
- Frequency :
- 100MHz
- Max Power Dissipation :
- 10W
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Published :
- 1998
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- JESD-30 Code :
- R-PSSO-G2
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Base Voltage (VCBO) :
- 120V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 500mA
- Mount :
- Surface Mount
- hFE Min :
- 120
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 21 Weeks
- Datasheets
- 2SD1733TLR

NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1733TLR Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 500mA 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 150mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 20mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2SD1733TLR Features
the DC current gain for this device is 180 @ 500mA 3V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz
2SD1733TLR Applications
There are a lot of ROHM Semiconductor
2SD1733TLR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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