2SD1685G
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- Mfr.Part #
- 2SD1685G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 5A TO126ML
- Stock
- 7,634
- In Stock ：
- 7,634
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 60V
- Factory Lead Time :
- 4 Weeks
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- Max Power Dissipation :
- 1.5W
- hFE Min :
- 280
- RoHS Status :
- RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 280 @ 500mA 2V
- Lead Free :
- Lead Free
- Packaging :
- Bulk
- Published :
- 2013
- Transition Frequency :
- 120MHz
- Package / Case :
- TO-225AA, TO-126-3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 3
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Surface Mount :
- No
- Gain Bandwidth Product :
- 120MHz
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Case Connection :
- Isolated
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 60mA, 3A
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 500mV
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 20V
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 500mV
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Max Collector Current :
- 5A
- Current - Collector (Ic) (Max) :
- 5A
- Mounting Type :
- Through Hole
- Datasheets
- 2SD1685G
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2SD1685G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 280 @ 500mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 60mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 120MHz.A maximum collector current of 5A volts can be achieved.
2SD1685G Features
the DC current gain for this device is 280 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SD1685G Applications
There are a lot of ON Semiconductor
2SD1685G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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