2SD1685G
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- Mfr.Part #
- 2SD1685G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 5A TO126ML
- Stock
- 7,634
- In Stock ：
- 7,634
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 500mV
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 20V
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 280 @ 500mA 2V
- Max Power Dissipation :
- 1.5W
- Surface Mount :
- No
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Collector Emitter Voltage (VCEO) :
- 500mV
- Package / Case :
- TO-225AA, TO-126-3
- Operating Temperature :
- 150°C TJ
- Case Connection :
- Isolated
- ECCN Code :
- EAR99
- Published :
- 2013
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Current - Collector (Ic) (Max) :
- 5A
- Pbfree Code :
- yes
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 60V
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Transition Frequency :
- 120MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 60mA, 3A
- Number of Elements :
- 1
- Max Collector Current :
- 5A
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 120MHz
- hFE Min :
- 280
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- 2SD1685G
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2SD1685G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 280 @ 500mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 60mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 120MHz.A maximum collector current of 5A volts can be achieved.
2SD1685G Features
the DC current gain for this device is 280 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SD1685G Applications
There are a lot of ON Semiconductor
2SD1685G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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