2SD1683T

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Mfr.Part #
2SD1683T
Manufacturer
Fairchild Semiconductor
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 50V 4A TO225-3
Stock
19,160
In Stock :
19,160

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
Pin Count :
3
Pbfree Code :
yes
Number of Terminations :
3
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
500mV @ 100mA, 2A
Frequency :
150MHz
Transistor Type :
NPN
Gain Bandwidth Product :
150MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Collector Emitter Voltage (VCEO) :
50V
Power Dissipation :
1.5W
Current - Collector Cutoff (Max) :
1μA ICBO
Transistor Application :
SWITCHING
Max Power Dissipation :
1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA 2V
Max Collector Current :
4A
Transition Frequency :
150MHz
Polarity/Channel Type :
NPN
ECCN Code :
EAR99
Terminal Finish :
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Operating Temperature :
150°C TJ
Element Configuration :
Single
Published :
2012
Collector Emitter Breakdown Voltage :
50V
Collector Emitter Saturation Voltage :
190mV
Package / Case :
TO-225AA, TO-126-3
Emitter Base Voltage (VEBO) :
6V
Packaging :
Bulk
RoHS Status :
RoHS Compliant
Surface Mount :
No
Lead Free :
Lead Free
hFE Min :
100
Number of Pins :
3
Collector Base Voltage (VCBO) :
60V
Datasheets
2SD1683T
Introducing Transistors - Bipolar (BJT) - Single Fairchild Semiconductor 2SD1683T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:150°C TJ, Package / Case:TO-225AA, TO-126-3, Number of Pins:3, 2SD1683T pinout, 2SD1683T datasheet PDF, 2SD1683T amp .Beyond Transistors - Bipolar (BJT) - Single Fairchild Semiconductor 2SD1683T ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor 2SD1683T


NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

2SD1683T Overview


In this device, the DC current gain is 100 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 190mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.150MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.

2SD1683T Features


the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 190mV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz


2SD1683T Applications


There are a lot of ON Semiconductor
2SD1683T applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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