2SD1683T
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- Mfr.Part #
- 2SD1683T
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 4A TO126ML
- Stock
- 8,294
- In Stock ：
- 8,294
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Package / Case :
- TO-225AA, TO-126-3
- Pin Count :
- 3
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 1.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Packaging :
- Bulk
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Max Collector Current :
- 4A
- Collector Emitter Saturation Voltage :
- 190mV
- Gain Bandwidth Product :
- 150MHz
- hFE Min :
- 100
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 60V
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 50V
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Frequency :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 2A
- RoHS Status :
- RoHS Compliant
- Surface Mount :
- No
- Transition Frequency :
- 150MHz
- Published :
- 2012
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1.5W
- Datasheets
- 2SD1683T
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2SD1683T Overview
In this device, the DC current gain is 100 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 190mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.150MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
2SD1683T Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 190mV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SD1683T Applications
There are a lot of ON Semiconductor
2SD1683T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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