2SD1683T
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- Mfr.Part #
- 2SD1683T
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 4A TO126ML
- Stock
- 8,294
- In Stock ：
- 8,294
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 50V
- Published :
- 2012
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 4A
- Pin Count :
- 3
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- hFE Min :
- 100
- Pbfree Code :
- yes
- Surface Mount :
- No
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 190mV
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Collector Emitter Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 2A
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 1.5W
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Collector Base Voltage (VCBO) :
- 60V
- Transition Frequency :
- 150MHz
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Frequency :
- 150MHz
- Power Dissipation :
- 1.5W
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 150MHz
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Package / Case :
- TO-225AA, TO-126-3
- Datasheets
- 2SD1683T
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2SD1683T Overview
In this device, the DC current gain is 100 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 190mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.150MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
2SD1683T Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 190mV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SD1683T Applications
There are a lot of ON Semiconductor
2SD1683T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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