2SD1683S
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- Mfr.Part #
- 2SD1683S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 4A TO126ML
- Stock
- 34,649
- In Stock ：
- 34,649
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 60V
- ECCN Code :
- EAR99
- hFE Min :
- 40
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Frequency :
- 1MHz
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 2A
- Number of Pins :
- 3
- Transition Frequency :
- 150MHz
- Height :
- 11mm
- Pin Count :
- 3
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 190mV
- Max Power Dissipation :
- 1.5W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Package / Case :
- TO-225AA, TO-126-3
- Number of Terminations :
- 3
- Current - Collector (Ic) (Max) :
- 4A
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 150MHz
- Max Collector Current :
- 4A
- Surface Mount :
- No
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Length :
- 8mm
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- Mounting Type :
- Through Hole
- Published :
- 2003
- Width :
- 3.3mm
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Datasheets
- 2SD1683S
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2SD1683S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 2V.With a collector emitter saturation voltage of 190mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 2A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
2SD1683S Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 190mV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SD1683S Applications
There are a lot of ON Semiconductor
2SD1683S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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