2SD1683S
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- Mfr.Part #
- 2SD1683S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 4A TO126ML
- Stock
- 34,649
- In Stock ：
- 34,649
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Number of Elements :
- 1
- Max Collector Current :
- 4A
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Element Configuration :
- Single
- hFE Min :
- 40
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Height :
- 11mm
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- Package / Case :
- TO-225AA, TO-126-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 150MHz
- Max Power Dissipation :
- 1.5W
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 6V
- Max Frequency :
- 1MHz
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Saturation Voltage :
- 190mV
- Collector Emitter Voltage (VCEO) :
- 50V
- Transition Frequency :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 2A
- Length :
- 8mm
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Current - Collector (Ic) (Max) :
- 4A
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Published :
- 2003
- Width :
- 3.3mm
- Datasheets
- 2SD1683S
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2SD1683S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 2V.With a collector emitter saturation voltage of 190mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 2A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
2SD1683S Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 190mV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SD1683S Applications
There are a lot of ON Semiconductor
2SD1683S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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