2SD1664T100P
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- Mfr.Part #
- 2SD1664T100P
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 32V 1A MPT3
- Stock
- 1,526
- In Stock ：
- 1,526
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- JESD-609 Code :
- e2
- Terminal Form :
- Flat
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 1A
- Voltage - Rated DC :
- 32V
- Published :
- 1998
- Transition Frequency :
- 150MHz
- Collector Emitter Voltage (VCEO) :
- 32V
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 32V
- Lead Free :
- Lead Free
- Base Part Number :
- 2SD1664
- Gain Bandwidth Product :
- 150MHz
- Reach Compliance Code :
- not_compliant
- JESD-30 Code :
- R-PSSO-F3
- Qualification Status :
- Not Qualified
- Contact Plating :
- Copper, Tin
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 40V
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 2W
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- hFE Min :
- 82
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Current Rating :
- 1A
- HTS Code :
- 8541.21.00.75
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 100mA 3V
- Polarity/Channel Type :
- NPN
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-243AA
- Terminal Finish :
- TIN COPPER
- Mount :
- Surface Mount
- VCEsat-Max :
- 0.4 V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Collector Emitter Breakdown Voltage :
- 32V
- Datasheets
- 2SD1664T100P
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD1664T100P Overview
This device has a DC current gain of 82 @ 100mA 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 32V volts can be used.A maximum collector current of 1A volts is possible.
2SD1664T100P Features
the DC current gain for this device is 82 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
2SD1664T100P Applications
There are a lot of ROHM Semiconductor
2SD1664T100P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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