2SD1620-TD-E
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- Mfr.Part #
- 2SD1620-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 10V 3A PCP
- Stock
- 32,726
- In Stock ：
- 32,726
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e6
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 30V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 3A 2V
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Reach Compliance Code :
- not_compliant
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 10V
- Package / Case :
- TO-243AA
- Factory Lead Time :
- 2 Weeks
- Length :
- 4.5mm
- Case Connection :
- COLLECTOR
- Max Breakdown Voltage :
- 10V
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Width :
- 2.5mm
- Collector Emitter Saturation Voltage :
- 400mV
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.5mm
- Transition Frequency :
- 200MHz
- Max Power Dissipation :
- 1.3W
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 10V
- Power - Max :
- 500mW
- Terminal Form :
- Flat
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Surface Mount :
- yes
- Max Collector Current :
- 3A
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 60mA, 3A
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2010
- Lead Free :
- Lead Free
- Frequency - Transition :
- 200MHz
- RoHS Status :
- ROHS3 Compliant
- Max Frequency :
- 1MHz
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- 2SD1620-TD-E
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD1620-TD-E Overview
DC current gain in this device equals 140 @ 3A 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 60mA, 3A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 200MHz.Breakdown input voltage is 10V volts.In extreme cases, the collector current can be as low as 3A volts.
2SD1620-TD-E Features
the DC current gain for this device is 140 @ 3A 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 60mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 200MHz
2SD1620-TD-E Applications
There are a lot of ON Semiconductor
2SD1620-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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