2SD1618T-TD-E
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- Mfr.Part #
- 2SD1618T-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.7A PCP
- Stock
- 59,581
- In Stock ：
- 59,581
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Surface Mount :
- yes
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 80mV @ 10mA, 100mA
- hFE Min :
- 200
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Factory Lead Time :
- 4 Weeks
- Number of Elements :
- 1
- JESD-609 Code :
- e6
- Height :
- 1.5mm
- Current - Collector (Ic) (Max) :
- 700mA
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Package / Case :
- TO-243AA
- Power Dissipation :
- 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 50mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 80mV
- Element Configuration :
- Single
- Width :
- 2.5mm
- Collector Base Voltage (VCBO) :
- 20V
- Published :
- 2012
- Terminal Form :
- Flat
- Collector Emitter Breakdown Voltage :
- 15V
- Max Collector Current :
- 700mA
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Transition Frequency :
- 250MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 15V
- Length :
- 4.5mm
- Frequency :
- 250MHz
- Max Power Dissipation :
- 500mW
- Datasheets
- 2SD1618T-TD-E
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NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD1618T-TD-E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 50mA 2V.With a collector emitter saturation voltage of 80mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 80mV @ 10mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 250MHz is present in the part.Collector current can be as low as 700mA volts at its maximum.
2SD1618T-TD-E Features
the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
2SD1618T-TD-E Applications
There are a lot of ON Semiconductor
2SD1618T-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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