2SD1207S
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- Mfr.Part #
- 2SD1207S
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A 3MP
- Stock
- 8,240
- In Stock ：
- 8,240
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Packaging :
- Bulk
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA 2V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency - Transition :
- 150MHz
- Current - Collector (Ic) (Max) :
- 2A
- Power - Max :
- 1W
- Supplier Device Package :
- 3-MP
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 1A
- Datasheets
- 2SD1207S
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SD1207S Overview
In this device, the DC current gain is 140 @ 100mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 50mA, 1A.Product comes in the supplier's device package 3-MP.There is a 50V maximal voltage in the device due to collector-emitter breakdown.
2SD1207S Features
the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 400mV @ 50mA, 1A
the supplier device package of 3-MP
2SD1207S Applications
There are a lot of Rochester Electronics, LLC
2SD1207S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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