2SD1060R-1EX
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- Mfr.Part #
- 2SD1060R-1EX
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 5A TO220-3
- Stock
- 36,470
- In Stock ：
- 36,470
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 1.75W
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Frequency - Transition :
- 30MHz
- Max Power Dissipation :
- 1.75W
- Collector Base Voltage (VCBO) :
- 60V
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Collector Emitter Breakdown Voltage :
- 50V
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 300mV
- Packaging :
- Tube
- Transistor Type :
- NPN
- Package / Case :
- TO-220-3
- Max Collector Current :
- 5A
- Published :
- 2013
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 300mA, 3A
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2SD1060R-1EX
NPN 150°C TJ 100μA ICBO TO-220-3 Tube Through Hole
2SD1060R-1EX Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 2V.When VCE saturation is 300mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).A maximum collector current of 5A volts can be achieved.
2SD1060R-1EX Features
the DC current gain for this device is 100 @ 1A 2V
the vce saturation(Max) is 300mV @ 300mA, 3A
2SD1060R-1EX Applications
There are a lot of ON Semiconductor
2SD1060R-1EX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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