2SCR522MT2L
- Mfr.Part #
- 2SCR522MT2L
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 20V 0.2A VMT3
- Stock
- 4
- In Stock :
- 4
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- JESD-609 Code :
- e2
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 20V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Qualification Status :
- Not Qualified
- Transition Frequency :
- 400MHz
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 20V
- Collector Emitter Voltage (VCEO) :
- 20V
- Package / Case :
- SOT-723
- Collector Emitter Saturation Voltage :
- 120mV
- Max Collector Current :
- 200mA
- Terminal Form :
- Flat
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- 200mA
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 400MHz
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 2V
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 120
- Factory Lead Time :
- 13 Weeks
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 150mW
- Published :
- 2015
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PDSO-F3
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2SCR522MT2L

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount
2SCR522MT2L Overview
In this device, the DC current gain is 120 @ 1mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 120mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 100mA.Maintaining the continuous collector voltage at 200mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.400MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 200mA volts.
2SCR522MT2L Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 400MHz
2SCR522MT2L Applications
There are a lot of ROHM Semiconductor
2SCR522MT2L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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