2SC5242-O(Q)

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Mfr.Part #
2SC5242-O(Q)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
TRANS NPN 230V 15A TO3P
Stock
1
In Stock :
1

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
Case Connection :
COLLECTOR
Emitter Base Voltage (VEBO) :
5V
RoHS Status :
RoHS Compliant
Vce Saturation (Max) @ Ib, Ic :
3V @ 800mA, 8A
Transistor Type :
NPN
Package / Case :
TO-3P-3, SC-65-3
Max Power Dissipation :
130W
Base Part Number :
2SC5242
Frequency :
30MHz
Collector Emitter Voltage (VCEO) :
230V
Collector Base Voltage (VCBO) :
230V
Transition Frequency :
30MHz
Published :
2011
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 1A 5V
Transistor Element Material :
SILICON
Collector Emitter Breakdown Voltage :
230V
Gain Bandwidth Product :
30MHz
Radiation Hardening :
No
Collector Emitter Saturation Voltage :
400mV
Mount :
Through Hole
Current Rating :
15A
Number of Pins :
3
Polarity/Channel Type :
NPN
Power Dissipation :
130W
Element Configuration :
Single
Number of Elements :
1
Current - Collector Cutoff (Max) :
5μA ICBO
Lead Free :
Lead Free
hFE Min :
80
Max Collector Current :
15A
Transistor Application :
AMPLIFIER
Factory Lead Time :
16 Weeks
Voltage - Rated DC :
230V
Moisture Sensitivity Level (MSL) :
Not Applicable
Number of Terminations :
3
Packaging :
Tube
Operating Temperature :
150°C TJ
Mounting Type :
Through Hole
Datasheets
2SC5242-O(Q)
Introducing Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SC5242-O(Q) from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Base Part Number:2SC5242, Number of Pins:3, Number of Terminations:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, 2SC5242-O(Q) pinout, 2SC5242-O(Q) datasheet PDF, 2SC5242-O(Q) amp .Beyond Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SC5242-O(Q) ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation 2SC5242-O(Q)


NPN 150°C TJ 5μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3, SC-65-3 Tube Through Hole

2SC5242-O(Q) Overview


This device has a DC current gain of 80 @ 1A 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 400mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 15A.In this part, there is a transition frequency of 30MHz.The maximum collector current is 15A volts.

2SC5242-O(Q) Features


the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 30MHz


2SC5242-O(Q) Applications


There are a lot of Toshiba Semiconductor and Storage
2SC5242-O(Q) applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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