2SC5232BTE85LF
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- Mfr.Part #
- 2SC5232BTE85LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 12V 0.5A SC59
- Stock
- 67,058
- In Stock ：
- 67,058
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2014
- Collector Base Voltage (VCBO) :
- 15V
- Collector Emitter Breakdown Voltage :
- 12V
- Power - Max :
- 150mW
- Packaging :
- Cut Tape (CT)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 80MHz
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Operating Temperature :
- 125°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 2V
- Gain Bandwidth Product :
- 130MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 150mW
- Polarity/Channel Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Max Breakdown Voltage :
- 12V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 200mA
- Max Collector Current :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 250mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 110mV
- Mount :
- Surface Mount
- hFE Min :
- 300
- Datasheets
- 2SC5232BTE85LF
NPN 125°C TJ 100nA ICBO NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
2SC5232BTE85LF Overview
This device has a DC current gain of 500 @ 10mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 110mV.A VCE saturation (Max) of 250mV @ 10mA, 200mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 80MHz.A breakdown input voltage of 12V volts can be used.A maximum collector current of 500mA volts is possible.
2SC5232BTE85LF Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of 110mV
the vce saturation(Max) is 250mV @ 10mA, 200mA
the emitter base voltage is kept at 5V
a transition frequency of 80MHz
2SC5232BTE85LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SC5232BTE85LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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