2SC5232BTE85LF
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- Mfr.Part #
- 2SC5232BTE85LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 12V 0.5A SC59
- Stock
- 67,058
- In Stock ：
- 67,058
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 12V
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 200mA
- Collector Emitter Breakdown Voltage :
- 12V
- Emitter Base Voltage (VEBO) :
- 5V
- Power - Max :
- 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 2V
- Mount :
- Surface Mount
- Published :
- 2014
- RoHS Status :
- RoHS Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 300
- Collector Emitter Voltage (VCEO) :
- 250mV
- Collector Base Voltage (VCBO) :
- 15V
- Gain Bandwidth Product :
- 130MHz
- Operating Temperature :
- 125°C TJ
- Transition Frequency :
- 80MHz
- Max Collector Current :
- 500mA
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 110mV
- Max Power Dissipation :
- 150mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Packaging :
- Cut Tape (CT)
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- 2SC5232BTE85LF
NPN 125°C TJ 100nA ICBO NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
2SC5232BTE85LF Overview
This device has a DC current gain of 500 @ 10mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 110mV.A VCE saturation (Max) of 250mV @ 10mA, 200mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 80MHz.A breakdown input voltage of 12V volts can be used.A maximum collector current of 500mA volts is possible.
2SC5232BTE85LF Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of 110mV
the vce saturation(Max) is 250mV @ 10mA, 200mA
the emitter base voltage is kept at 5V
a transition frequency of 80MHz
2SC5232BTE85LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SC5232BTE85LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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