2SC4116-Y,LF

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Mfr.Part #
2SC4116-Y,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
TRANS NPN 50V 0.15A SC70
Stock
130,061
In Stock :
130,061

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
Height :
900μm
Weight :
6.208546mg
Collector Base Voltage (VCBO) :
60V
Collector Emitter Breakdown Voltage :
50V
Packaging :
Cut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 2mA 6V
Contact Plating :
Silver, Tin
Package / Case :
SC-70, SOT-323
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Factory Lead Time :
12 Weeks
Pbfree Code :
yes
Mount :
Surface Mount
Continuous Collector Current :
150mA
Operating Temperature :
125°C TJ
Current - Collector Cutoff (Max) :
100nA ICBO
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Breakdown Voltage :
50V
Collector Emitter Saturation Voltage :
100mV
Transistor Type :
NPN
Length :
2mm
Gain Bandwidth Product :
80MHz
Reach Compliance Code :
Unknown
Max Power Dissipation :
100mW
Mounting Type :
Surface Mount
RoHS Status :
RoHS Compliant
Collector Emitter Voltage (VCEO) :
50V
hFE Min :
70
Max Collector Current :
150mA
Published :
2011
Emitter Base Voltage (VEBO) :
5V
Width :
1.25mm
Datasheets
2SC4116-Y,LF
Introducing Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SC4116-Y,LF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SC-70, SOT-323, Operating Temperature:125°C TJ, Mounting Type:Surface Mount, 2SC4116-Y,LF pinout, 2SC4116-Y,LF datasheet PDF, 2SC4116-Y,LF amp .Beyond Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SC4116-Y,LF ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation 2SC4116-Y,LF


NPN 125°C TJ 100nA ICBO SC-70, SOT-323 Cut Tape (CT) Surface Mount

2SC4116-Y,LF Overview


In this device, the DC current gain is 120 @ 2mA 6V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 100mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.A 150mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 150mA volts at Single BJT transistors maximum.

2SC4116-Y,LF Features


the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V


2SC4116-Y,LF Applications


There are a lot of Toshiba Semiconductor and Storage
2SC4116-Y,LF applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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