2SC4116-GR,LF
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- Mfr.Part #
- 2SC4116-GR,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A SC70
- Stock
- 5,895
- In Stock ：
- 5,895
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 2mA 6V
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Breakdown Voltage :
- 50V
- hFE Min :
- 70
- Length :
- 2mm
- Height :
- 900μm
- Base Part Number :
- 2SC4116
- Collector Emitter Saturation Voltage :
- 100mV
- Weight :
- 6.208546mg
- Max Collector Current :
- 150mA
- Factory Lead Time :
- 12 Weeks
- Published :
- 2015
- Package / Case :
- SC-70, SOT-323
- Mount :
- Surface Mount
- Contact Plating :
- Silver, Tin
- RoHS Status :
- RoHS Compliant
- Collector Base Voltage (VCBO) :
- 60V
- Operating Temperature :
- 125°C TJ
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Emitter Voltage (VCEO) :
- 50V
- Continuous Collector Current :
- 150mA
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Width :
- 1.25mm
- Reach Compliance Code :
- Unknown
- Gain Bandwidth Product :
- 80MHz
- Max Power Dissipation :
- 100mW
- Datasheets
- 2SC4116-GR,LF
NPN 125°C TJ 100nA ICBO SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SC4116-GR,LF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 70 @ 2mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 100mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 150mA in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
2SC4116-GR,LF Features
the DC current gain for this device is 70 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
2SC4116-GR,LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SC4116-GR,LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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