2SC2859-Y(TE85L,F)
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- Mfr.Part #
- 2SC2859-Y(TE85L,F)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.5A SMINI
- Stock
- 2,331
- In Stock ：
- 2,331
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Collector Base Voltage (VCBO) :
- 35V
- Max Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Min Operating Temperature :
- -55°C
- Max Power Dissipation :
- 150mW
- Power Dissipation :
- 150mW
- hFE Min :
- 70
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Current - Collector (Ic) (Max) :
- 500mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Mounting Type :
- Surface Mount
- Published :
- 2009
- Collector Emitter Saturation Voltage :
- 100mV
- Emitter Base Voltage (VEBO) :
- 5V
- Supplier Device Package :
- S-MINI
- Radiation Hardening :
- No
- Power - Max :
- 150mW
- Max Collector Current :
- 500mA
- RoHS Status :
- RoHS Compliant
- Gain Bandwidth Product :
- 300MHz
- Max Operating Temperature :
- 125°C
- Element Configuration :
- Single
- Packaging :
- Cut Tape (CT)
- Collector Emitter Voltage (VCEO) :
- 30V
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 30V
- Frequency - Transition :
- 300MHz
- Polarity :
- NPN
- Operating Temperature :
- 125°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Frequency :
- 300MHz
- Datasheets
- 2SC2859-Y(TE85L,F)
NPN 125°C TJ 100nA ICBO 1 Elements TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
2SC2859-Y(TE85L,F) Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 100mA 1V.With a collector emitter saturation voltage of 100mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a breakdown input voltage of 30V volts that it can take.The product comes in the supplier device package of S-Mini.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 500mA volts at its maximum.
2SC2859-Y(TE85L,F) Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the supplier device package of S-Mini
2SC2859-Y(TE85L,F) Applications
There are a lot of Toshiba Semiconductor and Storage
2SC2859-Y(TE85L,F) applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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