2SC2712-Y,LF
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- Mfr.Part #
- 2SC2712-Y,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A SMINI
- Stock
- 216,389
- In Stock ：
- 216,389
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 70
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 6V
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- 125°C TJ
- Max Collector Current :
- 150mA
- Collector Base Voltage (VCBO) :
- 60V
- Gain Bandwidth Product :
- 80MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- 2SC2712
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- 150mA
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 50V
- Max Power Dissipation :
- 150mW
- Terminal Form :
- Gull wing
- Transition Frequency :
- 80MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Type :
- NPN
- Factory Lead Time :
- 12 Weeks
- JESD-30 Code :
- R-PDSO-G3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- RoHS Compliant
- Max Breakdown Voltage :
- 50V
- Additional Feature :
- LOW NOISE
- Published :
- 2011
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Reach Compliance Code :
- Unknown
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Saturation Voltage :
- 100mV
- Number of Elements :
- 1
- Datasheets
- 2SC2712-Y,LF
NPN 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SC2712-Y,LF Overview
In this device, the DC current gain is 120 @ 2mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 100mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.Maintaining the continuous collector voltage at 150mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.80MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 150mA volts.
2SC2712-Y,LF Features
the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 80MHz
2SC2712-Y,LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SC2712-Y,LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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