2SC2712-OTE85LF
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- Mfr.Part #
- 2SC2712-OTE85LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO236
- Stock
- 23,412
- In Stock ：
- 23,412
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 2mA 6V
- Configuration :
- Single
- Published :
- 2009
- Terminal Form :
- Gull wing
- HTS Code :
- 8541.21.00.95
- Number of Elements :
- 1
- Transition Frequency :
- 80MHz
- Operating Temperature :
- 125°C TJ
- JESD-30 Code :
- R-PDSO-G3
- Factory Lead Time :
- 11 Weeks
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Frequency - Transition :
- 80MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Reach Compliance Code :
- Unknown
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Power - Max :
- 150mW
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector (Ic) (Max) :
- 150mA
- Additional Feature :
- LOW NOISE
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Packaging :
- Cut Tape (CT)
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Surface Mount
- Datasheets
- 2SC2712-OTE85LF
NPN 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
2SC2712-OTE85LF Overview
This device has a DC current gain of 70 @ 2mA 6V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 80MHz.Collector Emitter Breakdown occurs at 50VV - Maximum voltage.
2SC2712-OTE85LF Features
the DC current gain for this device is 70 @ 2mA 6V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 80MHz
2SC2712-OTE85LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SC2712-OTE85LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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