2SC2712-BL,LF
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- Mfr.Part #
- 2SC2712-BL,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A SMINI
- Stock
- 530
- In Stock ：
- 530
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- S-MINI
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Min Operating Temperature :
- -55°C
- Mount :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Collector Current :
- 150mA
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2014
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Collector Base Voltage (VCBO) :
- 60V
- Gain Bandwidth Product :
- 80MHz
- Current - Collector (Ic) (Max) :
- 150mA
- Operating Temperature :
- 125°C TJ
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- 100mV
- Polarity :
- NPN
- Frequency - Transition :
- 80MHz
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 2mA 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 125°C
- Transistor Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 150mW
- Power - Max :
- 150mW
- hFE Min :
- 70
- Factory Lead Time :
- 12 Weeks
- Packaging :
- Tape and Reel (TR)
- Datasheets
- 2SC2712-BL,LF
NPN 125°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SC2712-BL,LF Overview
In this device, the DC current gain is 70 @ 2mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 100mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Supplier device package S-Mini comes with the product.The device exhibits a collector-emitter breakdown at 50V.Maximum collector currents can be below 150mA volts.
2SC2712-BL,LF Features
the DC current gain for this device is 70 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the supplier device package of S-Mini
2SC2712-BL,LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SC2712-BL,LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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