2SC2712-BL,LF
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- Mfr.Part #
- 2SC2712-BL,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A SMINI
- Stock
- 530
- In Stock ：
- 530
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 150mA
- Published :
- 2014
- Max Power Dissipation :
- 150mW
- hFE Min :
- 70
- Collector Base Voltage (VCBO) :
- 60V
- Factory Lead Time :
- 12 Weeks
- Polarity :
- NPN
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Min Operating Temperature :
- -55°C
- Operating Temperature :
- 125°C TJ
- Max Operating Temperature :
- 125°C
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 2mA 6V
- Gain Bandwidth Product :
- 80MHz
- Supplier Device Package :
- S-MINI
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 150mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency - Transition :
- 80MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Power - Max :
- 150mW
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Emitter Saturation Voltage :
- 100mV
- Transistor Type :
- NPN
- Datasheets
- 2SC2712-BL,LF
NPN 125°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SC2712-BL,LF Overview
In this device, the DC current gain is 70 @ 2mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 100mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Supplier device package S-Mini comes with the product.The device exhibits a collector-emitter breakdown at 50V.Maximum collector currents can be below 150mA volts.
2SC2712-BL,LF Features
the DC current gain for this device is 70 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the supplier device package of S-Mini
2SC2712-BL,LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SC2712-BL,LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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