2SC2705-Y(TE6,F,M)

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Mfr.Part #
2SC2705-Y(TE6,F,M)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-226-3, TO-92-3 Long Body
Datasheet
Download
Description
TRANS NPN 150V 0.05A TO92MOD
Stock
26,099
In Stock :
26,099

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Operating Temperature :
150°C TJ
Max Collector Current :
50mA
Max Power Dissipation :
800mW
Mounting Type :
Through Hole
Collector Base Voltage (VCBO) :
150V
Frequency :
200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 10mA 5V
Emitter Base Voltage (VEBO) :
5V
Collector Emitter Voltage (VCEO) :
1V
Package / Case :
TO-226-3, TO-92-3 Long Body
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
100nA ICBO
Vce Saturation (Max) @ Ib, Ic :
1V @ 1mA, 10mA
Collector Emitter Breakdown Voltage :
150V
Current - Collector (Ic) (Max) :
50mA
Packaging :
Tape and Box (TB)
RoHS Status :
RoHS Compliant
Power Dissipation :
800mW
Number of Pins :
3
Published :
2009
Mount :
Through Hole
Reach Compliance Code :
Unknown
Transistor Type :
NPN
Introducing Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SC2705-Y(TE6,F,M) from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 Long Body, Number of Pins:3, 2SC2705-Y(TE6,F,M) pinout, 2SC2705-Y(TE6,F,M) datasheet PDF, 2SC2705-Y(TE6,F,M) amp .Beyond Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SC2705-Y(TE6,F,M) ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation 2SC2705-Y(TE6,F,M)


NPN 150°C TJ 100nA ICBO 1 Elements TO-226-3, TO-92-3 Long Body Tape & Box (TB) Through Hole

2SC2705-Y(TE6,F,M) Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 10mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.During maximum operation, collector current can be as low as 50mA volts.

2SC2705-Y(TE6,F,M) Features


the DC current gain for this device is 120 @ 10mA 5V
the vce saturation(Max) is 1V @ 1mA, 10mA
the emitter base voltage is kept at 5V


2SC2705-Y(TE6,F,M) Applications


There are a lot of Toshiba Semiconductor and Storage
2SC2705-Y(TE6,F,M) applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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