2SC2412KT146Q
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- Mfr.Part #
- 2SC2412KT146Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A SMT3
- Stock
- 74,854
- In Stock ：
- 74,854
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- VCEsat-Max :
- 0.4 V
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- 2SC2412
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7V
- Length :
- 2.9mm
- Max Power Dissipation :
- 200mW
- REACH SVHC :
- No SVHC
- HTS Code :
- 8541.21.00.75
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Gain Bandwidth Product :
- 180MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Max Frequency :
- 180MHz
- Width :
- 1.6mm
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Saturation Voltage :
- 400mV
- Transition Frequency :
- 180MHz
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 13 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Copper, Silver, Tin
- Height :
- 1.1mm
- Max Collector Current :
- 150mA
- hFE Min :
- 120
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 50V
- Terminal Position :
- Dual
- Current Rating :
- 150mA
- Continuous Collector Current :
- 150mA
- JESD-609 Code :
- e1
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- 50V
- Collector Emitter Voltage (VCEO) :
- 50V
- Published :
- 2004
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Datasheets
- 2SC2412KT146Q
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SC2412KT146Q Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at 150mA in order to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 180MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
2SC2412KT146Q Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2SC2412KT146Q Applications
There are a lot of ROHM Semiconductor
2SC2412KT146Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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