2SC2235-Y(MBSH1,FM
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- Mfr.Part #
- 2SC2235-Y(MBSH1,FM
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 120V 0.8A TO92MOD
- Stock
- 2,404
- In Stock ：
- 2,404
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Supplier Device Package :
- TO-92MOD
- Current - Collector (Ic) (Max) :
- 800mA
- Power - Max :
- 900mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 100mA 5V
- Published :
- 2009
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Frequency - Transition :
- 120MHz
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 120V
- Datasheets
- 2SC2235-Y(MBSH1,FM
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SC2235-Y(MBSH1,FM Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.TO-92MOD is the supplier device package for this product.This device displays a 120V maximum voltage - Collector Emitter Breakdown.
2SC2235-Y(MBSH1,FM Features
the DC current gain for this device is 80 @ 100mA 5V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-92MOD
2SC2235-Y(MBSH1,FM Applications
There are a lot of Toshiba Semiconductor and Storage
2SC2235-Y(MBSH1,FM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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