2SC2229-Y(T6MITIFM
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- Mfr.Part #
- 2SC2229-Y(T6MITIFM
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 150V 0.05A TO92MOD
- Stock
- 20,737
- In Stock ：
- 20,737
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Voltage - Collector Emitter Breakdown (Max) :
- 150V
- Packaging :
- Bulk
- Current - Collector (Ic) (Max) :
- 50mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Published :
- 2009
- Frequency - Transition :
- 120MHz
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 10mA 5V
- Power - Max :
- 800mW
- Supplier Device Package :
- TO-92MOD
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Datasheets
- 2SC2229-Y(T6MITIFM
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SC2229-Y(T6MITIFM Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 10mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 150V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2SC2229-Y(T6MITIFM Features
the DC current gain for this device is 70 @ 10mA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
the supplier device package of TO-92MOD
2SC2229-Y(T6MITIFM Applications
There are a lot of Toshiba Semiconductor and Storage
2SC2229-Y(T6MITIFM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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