2SC1741ASTPQ
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- Mfr.Part #
- 2SC1741ASTPQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-72 Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A SPT
- Stock
- 1,788
- In Stock ：
- 1,788
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 40V
- Max Breakdown Voltage :
- 50V
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Published :
- 2004
- Collector Emitter Voltage (VCEO) :
- 200mV
- Pin Count :
- 3
- Base Part Number :
- 2SC1741A
- Mount :
- Through Hole
- JESD-30 Code :
- R-PSIP-T3
- Packaging :
- Tape and Box (TB)
- JESD-609 Code :
- e1
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 72
- Power - Max :
- 300mW
- Max Collector Current :
- 1A
- Lead Free :
- Lead Free
- HTS Code :
- 8541.21.00.75
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Voltage - Rated DC :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Transition Frequency :
- 250MHz
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Gain Bandwidth Product :
- 250MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Max Power Dissipation :
- 830mW
- Terminal Finish :
- TIN SILVER COPPER
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 500mA
- Collector Emitter Breakdown Voltage :
- 100V
- Package / Case :
- SC-72 Formed Leads
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- hFE Min :
- 120
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2SC1741ASTPQ
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SC-72 Formed Leads Tape & Box (TB) Through Hole
2SC1741ASTPQ Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 15mA, 150mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 1A volts.
2SC1741ASTPQ Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 250MHz
2SC1741ASTPQ Applications
There are a lot of ROHM Semiconductor
2SC1741ASTPQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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