2SC1741ASTPQ
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- Mfr.Part #
- 2SC1741ASTPQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-72 Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A SPT
- Stock
- 1,788
- In Stock ：
- 1,788
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Max Breakdown Voltage :
- 50V
- Current Rating :
- 500mA
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Qualification Status :
- Not Qualified
- Collector Emitter Breakdown Voltage :
- 100V
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Terminal Finish :
- TIN SILVER COPPER
- Voltage - Rated DC :
- 50V
- Transition Frequency :
- 250MHz
- Package / Case :
- SC-72 Formed Leads
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 40V
- Packaging :
- Tape and Box (TB)
- hFE Min :
- 120
- JESD-609 Code :
- e1
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Base Part Number :
- 2SC1741A
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSIP-T3
- Mounting Type :
- Through Hole
- Number of Pins :
- 72
- Published :
- 2004
- Collector Emitter Voltage (VCEO) :
- 200mV
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 250MHz
- Peak Reflow Temperature (Cel) :
- 260
- Power - Max :
- 300mW
- Max Power Dissipation :
- 830mW
- Element Configuration :
- Single
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Max Collector Current :
- 1A
- RoHS Status :
- ROHS3 Compliant
- HTS Code :
- 8541.21.00.75
- Datasheets
- 2SC1741ASTPQ
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SC-72 Formed Leads Tape & Box (TB) Through Hole
2SC1741ASTPQ Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 15mA, 150mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 1A volts.
2SC1741ASTPQ Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 250MHz
2SC1741ASTPQ Applications
There are a lot of ROHM Semiconductor
2SC1741ASTPQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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