2SC1213AB-E
- Mfr.Part #
- 2SC1213AB-E
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A TO92
- Stock
- 11,147
- In Stock :
- 11,147
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Package :
- Bulk
- Current - Collector Cutoff (Max) :
- 500nA (ICBO)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Collector-Emitter Voltage-Max :
- 50 V
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C (TJ)
- Factory Lead Time :
- 1 Week
- Configuration :
- Single
- Number of Terminals :
- 3
- Supplier Device Package :
- TO-92
- Series :
- -
- Collector Current-Max (IC) :
- 0.5 A
- Package Shape :
- Round
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- JESD-30 Code :
- O-PBCY-T3
- HTS Code :
- 8541.21.00.95
- JESD-609 Code :
- e2
- Current - Collector (Ic) (Max) :
- 500 mA
- Polarity/Channel Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 15mA, 150mA
- Power - Max :
- 400 mW
- Frequency - Transition :
- -
- Product Status :
- Active
- JEDEC-95 Code :
- TO-92
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- TIN COPPER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA, 3V
- Terminal Position :
- BOTTOM
- Manufacturer :
- Renesas Electronics Corporation
- Terminal Form :
- THROUGH-HOLE
- DC Current Gain-Min (hFE) :
- 60
- Transistor Type :
- NPN
- Qualification Status :
- Not Qualified
- Datasheets
- 2SC1213AB-E

NPN 150°C (TJ) 500nA (ICBO) 1 Elements SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Through Hole
2SC1213AB-E Overview
DC current gain in this device equals 60 @ 10mA, 3V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 15mA, 150mA.Product comes in TO-92 supplier package.Maximal collector-emitter voltage can be set at 50 V.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2SC1213AB-E Features
the DC current gain for this device is 60 @ 10mA, 3V
the vce saturation(Max) is 600mV @ 15mA, 150mA
the supplier device package of TO-92
2SC1213AB-E Applications
There are a lot of Renesas Electronics America Inc
2SC1213AB-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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