2SC1213AB-E

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Mfr.Part #
2SC1213AB-E
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 50V 0.5A TO92
Stock
11,147
In Stock :
11,147

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Transistors - Bipolar (BJT) - Single
Pbfree Code :
yes
Package :
Bulk
Current - Collector Cutoff (Max) :
500nA (ICBO)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
Collector-Emitter Voltage-Max :
50 V
ECCN Code :
EAR99
Operating Temperature :
150°C (TJ)
Factory Lead Time :
1 Week
Configuration :
Single
Number of Terminals :
3
Supplier Device Package :
TO-92
Series :
-
Collector Current-Max (IC) :
0.5 A
Package Shape :
Round
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
JESD-30 Code :
O-PBCY-T3
HTS Code :
8541.21.00.95
JESD-609 Code :
e2
Current - Collector (Ic) (Max) :
500 mA
Polarity/Channel Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
50 V
Pin Count :
3
Transistor Element Material :
SILICON
Surface Mount :
No
Mounting Type :
Through Hole
Reach Compliance Code :
Compliant
Vce Saturation (Max) @ Ib, Ic :
600mV @ 15mA, 150mA
Power - Max :
400 mW
Frequency - Transition :
-
Product Status :
Active
JEDEC-95 Code :
TO-92
Transistor Application :
AMPLIFIER
Terminal Finish :
TIN COPPER
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 10mA, 3V
Terminal Position :
BOTTOM
Manufacturer :
Renesas Electronics Corporation
Terminal Form :
THROUGH-HOLE
DC Current Gain-Min (hFE) :
60
Transistor Type :
NPN
Qualification Status :
Not Qualified
Datasheets
2SC1213AB-E
Introducing Transistors - Bipolar (BJT) - Single Intersil (Renesas Electronics Corporation) 2SC1213AB-E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C (TJ), Package / Case:TO-226-3, TO-92-3 (TO-226AA), Mounting Type:Through Hole, 2SC1213AB-E pinout, 2SC1213AB-E datasheet PDF, 2SC1213AB-E amp .Beyond Transistors - Bipolar (BJT) - Single Intersil (Renesas Electronics Corporation) 2SC1213AB-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) 2SC1213AB-E


NPN 150°C (TJ) 500nA (ICBO) 1 Elements SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Through Hole

2SC1213AB-E Overview


DC current gain in this device equals 60 @ 10mA, 3V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 15mA, 150mA.Product comes in TO-92 supplier package.Maximal collector-emitter voltage can be set at 50 V.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

2SC1213AB-E Features


the DC current gain for this device is 60 @ 10mA, 3V
the vce saturation(Max) is 600mV @ 15mA, 150mA
the supplier device package of TO-92


2SC1213AB-E Applications


There are a lot of Renesas Electronics America Inc
2SC1213AB-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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