2SC1627A-Y,PASF(M
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- Mfr.Part #
- 2SC1627A-Y,PASF(M
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.4A TO92MOD
- Stock
- 44,871
- In Stock ：
- 44,871
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2009
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 200A
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Power - Max :
- 800mW
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 100MHz
- Packaging :
- Bulk
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Supplier Device Package :
- TO-92MOD
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 50mA 2V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current - Collector (Ic) (Max) :
- 400mA
- Datasheets
- 2SC1627A-Y,PASF(M
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SC1627A-Y,PASF(M Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 50mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2SC1627A-Y,PASF(M Features
the DC current gain for this device is 70 @ 50mA 2V
the vce saturation(Max) is 400mV @ 20mA, 200A
the supplier device package of TO-92MOD
2SC1627A-Y,PASF(M Applications
There are a lot of Toshiba Semiconductor and Storage
2SC1627A-Y,PASF(M applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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