2SC1627A-O,PASF(M
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- Mfr.Part #
- 2SC1627A-O,PASF(M
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.4A TO92MOD
- Stock
- 5,743
- In Stock ：
- 5,743
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 50mA 2V
- Mounting Type :
- Through Hole
- Power - Max :
- 800mW
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Current - Collector (Ic) (Max) :
- 400mA
- Frequency - Transition :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Published :
- 2009
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 200A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Supplier Device Package :
- TO-92MOD
- Packaging :
- Bulk
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Transistor Type :
- NPN
- Datasheets
- 2SC1627A-O,PASF(M
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SC1627A-O,PASF(M Overview
This device has a DC current gain of 70 @ 50mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-92MOD.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.
2SC1627A-O,PASF(M Features
the DC current gain for this device is 70 @ 50mA 2V
the vce saturation(Max) is 400mV @ 20mA, 200A
the supplier device package of TO-92MOD
2SC1627A-O,PASF(M Applications
There are a lot of Toshiba Semiconductor and Storage
2SC1627A-O,PASF(M applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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