2SA2153-TD-E

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Mfr.Part #
2SA2153-TD-E
Manufacturer
onsemi
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 50V 2A PCP
Stock
8,751
In Stock :
8,751

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Max Breakdown Voltage :
50V
Mounting Type :
Surface Mount
Current - Collector Cutoff (Max) :
1μA ICBO
Surface Mount :
yes
Transistor Type :
PNP
JESD-609 Code :
e6
Emitter Base Voltage (VEBO) :
-6V
Number of Pins :
3
Collector Base Voltage (VCBO) :
-50V
Package / Case :
TO-243AA
Max Collector Current :
2A
Published :
2005
Width :
2.5mm
Lead Free :
Lead Free
Polarity/Channel Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
400mV @ 50mA, 1A
Length :
4.5mm
Operating Temperature :
150°C TJ
ECCN Code :
EAR99
Power - Max :
3.5W
Gain Bandwidth Product :
420MHz
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Collector Emitter Voltage (VCEO) :
50V
Pbfree Code :
yes
Max Power Dissipation :
1.3W
Height :
1.5mm
Packaging :
Tape and Reel (TR)
Max Frequency :
1MHz
Collector Emitter Saturation Voltage :
-200mV
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 100mA 2V
Pin Count :
3
Element Configuration :
Single
Reach Compliance Code :
not_compliant
Factory Lead Time :
5 Weeks
Collector Emitter Breakdown Voltage :
50V
Datasheets
2SA2153-TD-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SA2153-TD-E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-243AA, Operating Temperature:150°C TJ, 2SA2153-TD-E pinout, 2SA2153-TD-E datasheet PDF, 2SA2153-TD-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SA2153-TD-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SA2153-TD-E


PNP 150°C TJ 1μA ICBO NPN TO-243AA Tape & Reel (TR) Surface Mount

2SA2153-TD-E Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 2A volts can be achieved.

2SA2153-TD-E Features


the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at -6V


2SA2153-TD-E Applications


There are a lot of ON Semiconductor
2SA2153-TD-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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