2SA1417T-TD-E
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- Mfr.Part #
- 2SA1417T-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A PCP
- Stock
- 2,894
- In Stock ：
- 2,894
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reach Compliance Code :
- not_compliant
- Length :
- 4.5mm
- Operating Temperature :
- 150°C TJ
- Width :
- 2.5mm
- Height :
- 1.5mm
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2012
- Pbfree Code :
- yes
- Max Collector Current :
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Max Power Dissipation :
- 500mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- hFE Min :
- 100
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e6
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Base Voltage (VCBO) :
- -120V
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -220mV
- Gain Bandwidth Product :
- 120MHz
- Package / Case :
- TO-243AA
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- -6V
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 100V
- Max Frequency :
- 120MHz
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 100mA, 1A
- Datasheets
- 2SA1417T-TD-E
2SA1417T-TD-E Documents
PNP 150°C TJ 100nA ICBO TO-243AA Tape & Reel (TR) Surface Mount
2SA1417T-TD-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 5V.The collector emitter saturation voltage is -220mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 2A volts can be achieved.
2SA1417T-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -220mV
the vce saturation(Max) is 400mV @ 100mA, 1A
the emitter base voltage is kept at -6V
2SA1417T-TD-E Applications
There are a lot of ON Semiconductor
2SA1417T-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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