2SA1417S-TD-E
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- Mfr.Part #
- 2SA1417S-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A PCP
- Stock
- 11,340
- In Stock ：
- 11,340
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2006
- Height :
- 1.5mm
- Max Frequency :
- 120MHz
- Factory Lead Time :
- 9 Weeks
- Transistor Type :
- PNP
- Max Collector Current :
- 2A
- Collector Base Voltage (VCBO) :
- -120V
- Width :
- 2.5mm
- Max Power Dissipation :
- 500mW
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- -6V
- Collector Emitter Saturation Voltage :
- -220mV
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e6
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 100mA, 1A
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Package / Case :
- TO-243AA
- Length :
- 4.5mm
- Gain Bandwidth Product :
- 120MHz
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 100V
- Datasheets
- 2SA1417S-TD-E
2SA1417S-TD-E Documents
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PNP 150°C TJ 100nA ICBO TO-243AA Tape & Reel (TR) Surface Mount
2SA1417S-TD-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of -220mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -6V can result in a high level of efficiency.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 2A volts.
2SA1417S-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -220mV
the vce saturation(Max) is 400mV @ 100mA, 1A
the emitter base voltage is kept at -6V
2SA1417S-TD-E Applications
There are a lot of ON Semiconductor
2SA1417S-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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