2PD602ARL,235
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- Mfr.Part #
- 2PD602ARL,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A TO236AB
- Stock
- 15,029
- In Stock ：
- 15,029
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 160MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 150mA 10V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- 2PD602
- Series :
- Automotive, AEC-Q101
- Max Collector Current :
- 500mA
- Power - Max :
- 250mW
- Collector Base Voltage (VCBO) :
- 60V
- Published :
- 2008
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Transition Frequency :
- 160MHz
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 250mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 600mV
- Configuration :
- Single
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- Gull wing
- Datasheets
- 2PD602ARL,235
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PD602ARL,235 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 30mA, 300mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 160MHz.During maximum operation, collector current can be as low as 500mA volts.
2PD602ARL,235 Features
the DC current gain for this device is 120 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
a transition frequency of 160MHz
2PD602ARL,235 Applications
There are a lot of Nexperia USA Inc.
2PD602ARL,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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