2PD601BRL,215
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- Mfr.Part #
- 2PD601BRL,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.2A TO236AB
- Stock
- 112,271
- In Stock ：
- 112,271
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Transition Frequency :
- 250MHz
- Test Current :
- 5mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Series :
- Automotive, AEC-Q101
- Base Part Number :
- 2PD601A
- Transistor Type :
- NPN
- Published :
- 2010
- Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Element Material :
- SILICON
- Frequency :
- 250MHz
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Max Power Dissipation :
- 250mW
- Power Dissipation :
- 250mW
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Zener Voltage :
- 22V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Tolerance :
- 5%
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 200mA
- Mount :
- Surface Mount
- hFE Min :
- 210
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 50V
- Factory Lead Time :
- 4 Weeks
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Datasheets
- 2PD601BRL,215
2PD601BRL,215 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PD601BRL,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 210 @ 2mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 250MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 200mA volts.
2PD601BRL,215 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
2PD601BRL,215 Applications
There are a lot of Nexperia USA Inc.
2PD601BRL,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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