2PD601BRL,215
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- Mfr.Part #
- 2PD601BRL,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA 2PD601 - SMALL SIGNAL B
- Stock
- 112,271
- In Stock ：
- 112,271
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Automotive, AEC-Q101
- Terminal Form :
- Gull wing
- Power Dissipation :
- 250mW
- Zener Voltage :
- 22V
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Frequency :
- 250MHz
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 50V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 210
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Published :
- 2010
- Max Collector Current :
- 200mA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Tolerance :
- 5%
- Test Current :
- 5mA
- Configuration :
- Single
- Base Part Number :
- 2PD601A
- Max Power Dissipation :
- 250mW
- Transition Frequency :
- 250MHz
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- Max Breakdown Voltage :
- 50V
- Terminal Position :
- Dual
- Datasheets
- 2PD601BRL,215
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PD601BRL,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 210 @ 2mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 250MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 200mA volts.
2PD601BRL,215 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
2PD601BRL,215 Applications
There are a lot of Nexperia USA Inc.
2PD601BRL,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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