2PD601BRL,215
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- Mfr.Part #
- 2PD601BRL,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA 2PD601 - SMALL SIGNAL B
- Stock
- 112,271
- In Stock ：
- 112,271
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Transition Frequency :
- 250MHz
- hFE Min :
- 210
- Frequency :
- 250MHz
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Base Part Number :
- 2PD601A
- Power Dissipation :
- 250mW
- Max Power Dissipation :
- 250mW
- Series :
- Automotive, AEC-Q101
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Max Collector Current :
- 200mA
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 50V
- Collector Emitter Breakdown Voltage :
- 50V
- Tolerance :
- 5%
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage (VEBO) :
- 6V
- Test Current :
- 5mA
- Zener Voltage :
- 22V
- Collector Base Voltage (VCBO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Published :
- 2010
- Pin Count :
- 3
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Configuration :
- Single
- Datasheets
- 2PD601BRL,215
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PD601BRL,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 210 @ 2mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 250MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 200mA volts.
2PD601BRL,215 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
2PD601BRL,215 Applications
There are a lot of Nexperia USA Inc.
2PD601BRL,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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