2N7002E,215

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Package / Case :

TO-236-3, SC-59, SOT-23-3

FET Type :

N-Channel

Vgs (Max) :

±30V

Drain to Source Resistance :

780mOhm

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

Gate Charge (Qg) (Max) @ Vgs :

0.69nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Supplier Device Package :

TO-236AB

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

385mA

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Rds On (Max) @ Id, Vgs :

3Ohm @ 500mA, 10V

Series :

TrenchMOS™

Power Dissipation-Max :

830mW Ta

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

385mA Ta