2N7002CK,215
- Mfr.Part #
- 2N7002CK,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 0.3A SOT-23
- Stock
- 555,795
- In Stock :
- 555,795
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- JEDEC-95 Code :
- TO-236AB
- Feedback Cap-Max (Crss) :
- 7.5 pF
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Transistor Element Material :
- SILICON
- Published :
- 2009
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Reference Standard :
- IEC-60134
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 4.5V
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 1.6 Ω @ 500mA, 10V
- Factory Lead Time :
- 4 Weeks
- Drain Current-Max (Abs) (ID) :
- 0.3A
- JESD-30 Code :
- R-PDSO-G3
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 55pF @ 25V
- Surface Mount :
- yes
- Drain to Source Voltage (Vdss) :
- 60V
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 300mA Ta
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min :
- 60V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 350mW Ta
- Datasheets
- 2N7002CK,215

N-Channel Tape & Reel (TR) 1.6 Ω @ 500mA, 10V ±20V 55pF @ 25V 1.3nC @ 4.5V 60V TO-236-3, SC-59, SOT-23-3
2N7002CK,215 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 55pF @ 25V.0.3A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 60V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (10V) reduces this device's overall power consumption.
2N7002CK,215 Features
a 60V drain to source voltage (Vdss)
2N7002CK,215 Applications
There are a lot of Nexperia USA Inc.
2N7002CK,215 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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