2N7002BKV,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Lead Free :

Lead Free

Fall Time (Typ) :

7 ns

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

6ns

Power - Max :

350mW

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Terminal Form :

Flat

Factory Lead Time :

4 Weeks

Continuous Drain Current (ID) :

340mA

Operating Temperature :

150°C TJ

Drain Current-Max (Abs) (ID) :

0.34A

Resistance :

1.6Ohm

Element Configuration :

Dual

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Turn On Delay Time :

5 ns

Peak Reflow Temperature (Cel) :

260

Pin Count :

6

JESD-609 Code :

e3

Package / Case :

SOT-563, SOT-666

RoHS Status :

ROHS3 Compliant

Max Dual Supply Voltage :

60V

Max Power Dissipation :

350mW

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Power Dissipation :

525mW

Contact Plating :

Tin

FET Type :

2 N-Channel (Dual)

Published :

2010

ECCN Code :

EAR99

Series :

Automotive, AEC-Q101, TrenchMOS™

Turn-Off Delay Time :

12 ns

Drain to Source Breakdown Voltage :

60V

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 4.5V

Number of Terminations :

6

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE