2N7002BKV,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Max Power Dissipation :

350mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

JESD-609 Code :

e3

FET Type :

2 N-Channel (Dual)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Factory Lead Time :

4 Weeks

Pin Count :

6

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

60V

Turn On Delay Time :

5 ns

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Number of Terminations :

6

Package / Case :

SOT-563, SOT-666

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Resistance :

1.6Ohm

Rise Time :

6ns

Drain Current-Max (Abs) (ID) :

0.34A

Peak Reflow Temperature (Cel) :

260

Power - Max :

350mW

Series :

Automotive, AEC-Q101, TrenchMOS™

Number of Elements :

2

Continuous Drain Current (ID) :

340mA

Turn-Off Delay Time :

12 ns

Drain to Source Breakdown Voltage :

60V

Published :

2010

Number of Pins :

6

ECCN Code :

EAR99

Terminal Form :

Flat

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

7 ns

Power Dissipation :

525mW

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 4.5V