2N6849U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Packaging :

Bulk

FET Type :

P-Channel

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

800mW Ta 25W Tc

Radiation Hardening :

No

Vgs (Max) :

±20V

Published :

1997

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

34.8nC @ 10V

Drain to Source Voltage (Vdss) :

100V

Mounting Type :

Surface Mount

Package / Case :

18-CLCC

Current - Continuous Drain (Id) @ 25°C :

6.5A Tc

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

300m Ω @ 4.1A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

6.5A

Drive Voltage (Max Rds On,Min Rds On) :

10V