2N6800

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

400V

Packaging :

Bulk

RoHS Status :

Non-RoHS Compliant

Terminal Position :

BOTTOM

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

800mW Ta 25W Tc

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

3A

Drain-source On Resistance-Max :

1.1Ohm

Number of Pins :

3

Terminal Form :

Wire

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

400V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

3A

Number of Terminations :

3

Mount :

Through Hole

HTS Code :

8541.21.00.95

Case Connection :

DRAIN

Package / Case :

TO-205AF Metal Can

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

5.75nC @ 10V

Rds On (Max) @ Id, Vgs :

1 Ω @ 2A, 10V