2N6849

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Published :

1997

Terminal Position :

BOTTOM

Packaging :

Bulk

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

TIN LEAD

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Power Dissipation-Max :

800mW Ta 25W Tc

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

100V

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

Power Dissipation :

800mW

Additional Feature :

High Reliability

Gate Charge (Qg) (Max) @ Vgs :

34.8nC @ 10V

Terminal Form :

Wire

Continuous Drain Current (ID) :

6.5A

Mounting Type :

Through Hole

ECCN Code :

EAR99

Package / Case :

TO-205AF Metal Can

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

320m Ω @ 6.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

6.5A Tc

Pin Count :

2

JESD-609 Code :

e0

Case Connection :

DRAIN

Number of Elements :

1

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

Number of Pins :

3

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ