2N6847

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

FET Feature :

-

Drain to Source Voltage (Vdss) :

200 V

Package / Case :

TO-205AF Metal Can

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

P-Channel

Drive Voltage (Max Rds On, Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

2.5A (Tc)

Package :

Bulk

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation (Max) :

20W (Tc)

Technology :

MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs :

1.725Ohm @ 2.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

330 pF @ 25 V

Vgs (Max) :

±20V

Product Status :

Active

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

8.4 nC @ 10 V

Supplier Device Package :

TO-205AF (TO-39)