2N6661JTXP02

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Terminal Position :

BOTTOM

Number of Pins :

3

Power Dissipation-Max :

725mW Ta 6.25W Tc

Continuous Drain Current (ID) :

860mA

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 1mA

Pbfree Code :

No

HTS Code :

8541.21.00.95

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

4Ohm

Feedback Cap-Max (Crss) :

10 pF

Number of Terminations :

3

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Additional Feature :

LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Mount :

Through Hole

Package / Case :

TO-205AD, TO-39-3 Metal Can

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Number of Elements :

1

Drain to Source Voltage (Vdss) :

90V

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

4 Ω @ 1A, 10V

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

36 Weeks

Drain Current-Max (Abs) (ID) :

0.86A

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Published :

2012

Pin Count :

2

Terminal Form :

Wire

Current - Continuous Drain (Id) @ 25°C :

860mA Tc

DS Breakdown Voltage-Min :

90V