2N6661JTXL02

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

ECCN Code :

EAR99

Additional Feature :

LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Drain-source On Resistance-Max :

4Ohm

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

0.86A

DS Breakdown Voltage-Min :

90V

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-205AD, TO-39-3 Metal Can

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

860mA Tc

Pbfree Code :

No

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Terminal Position :

BOTTOM

Published :

2012

HTS Code :

8541.21.00.95

Terminal Form :

Wire

Packaging :

Tube

Transistor Element Material :

SILICON

Pin Count :

2

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

4 Ω @ 1A, 10V

Feedback Cap-Max (Crss) :

10 pF

Vgs(th) (Max) @ Id :

2V @ 1mA

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

90V

Continuous Drain Current (ID) :

860mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Power Dissipation-Max :

725mW Ta 6.25W Tc

Number of Terminations :

3