2N6661JTX02

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

90V

Packaging :

Tube

Pbfree Code :

No

Power Dissipation :

725mW

Drain-source On Resistance-Max :

4Ohm

Number of Elements :

1

Package / Case :

TO-205AD, TO-39-3 Metal Can

Terminal Form :

Wire

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

DS Breakdown Voltage-Min :

90V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Current - Continuous Drain (Id) @ 25°C :

860mA Tc

Additional Feature :

LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead

Mount :

Through Hole

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Pin Count :

2

Terminal Position :

BOTTOM

Continuous Drain Current (ID) :

860mA

ECCN Code :

EAR99

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

0.86A

Rds On (Max) @ Id, Vgs :

4 Ω @ 1A, 10V

Transistor Application :

SWITCHING

Power Dissipation-Max :

725mW Ta 6.25W Tc

Case Connection :

DRAIN

Number of Pins :

3

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 1mA

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Published :

2016