2N6661-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Contact Plating :

Tin

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

90V

Radiation Hardening :

No

Published :

2014

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Supplier Device Package :

TO-39

Mount :

Through Hole

Min Operating Temperature :

-55°C

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

90V

Number of Channels :

1

Width :

8.15mm

Rds On (Max) @ Id, Vgs :

4Ohm @ 1A, 10V

Mounting Type :

Through Hole

Drain to Source Resistance :

4Ohm

Power Dissipation :

725mW

Vgs(th) (Max) @ Id :

2V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Rds On Max :

4 Ω

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Package / Case :

TO-205AD, TO-39-3 Metal Can

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Power Dissipation-Max :

725mW Ta 6.25W Tc

Height :

6.6mm

Input Capacitance :

50pF

Length :

9.4mm

Current - Continuous Drain (Id) @ 25°C :

860mA Tc

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Packaging :

Tube

Continuous Drain Current (ID) :

860mA