2N6661-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

90V

Mounting Type :

Through Hole

Power Dissipation :

725mW

Rds On (Max) @ Id, Vgs :

4Ohm @ 1A, 10V

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

90V

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Number of Pins :

3

Rds On Max :

4 Ω

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2014

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Number of Channels :

1

Input Capacitance :

50pF

Mount :

Through Hole

Element Configuration :

Single

Height :

6.6mm

Packaging :

Tube

Min Operating Temperature :

-55°C

Radiation Hardening :

No

FET Type :

N-Channel

Contact Plating :

Tin

Width :

8.15mm

Drain to Source Resistance :

4Ohm

Number of Elements :

1

Max Operating Temperature :

150°C

Operating Temperature :

-55°C~150°C TJ

Supplier Device Package :

TO-39

Length :

9.4mm

Vgs(th) (Max) @ Id :

2V @ 1mA

Power Dissipation-Max :

725mW Ta 6.25W Tc

Current - Continuous Drain (Id) @ 25°C :

860mA Tc

Package / Case :

TO-205AD, TO-39-3 Metal Can

Continuous Drain Current (ID) :

860mA